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IRFP350
Data Sheet July 1999 File Number
2319.4
16A, 400V, 0.300 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17434.
Features
* 16A, 400V * rDS(ON) = 0.300 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER IRFP350 PACKAGE TO-247 BRAND IRFP350
Symbol
D
NOTE: When ordering, include the entire part number.
G
S
Packaging
JEDEC STYLE TO-247 TOP VIEW
SOURCE DRAIN GATE
DRAIN (FLANGE)
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
IRFP350
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRFP350 400 400 16 10 64 20 180 1.44 700 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs tD(ON) tr tD(OFF) tf Qg Qgs Qgd CISS COSS CRSS LD Measured Between the Contact Screw on Header that is Closer to Source and Gate Pins and Center of Die Measured from the Source Lead, 6mm (0.25in) From Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances
D LD G LS S
TEST CONDITIONS VGS = 0V, ID = 250A (Figure 10) VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) VGS = 20V VGS = 10V, ID = 8.9A (Figures 8, 9) VDS = 2 x VGS, ID = 8.0A (Figure 12) VDD = 200V, ID = 16A, RGS = 6.2, VGS = 10V, RL = 12.3 MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 16A, VDS = 0.8 x Rated BVDSS. IG(REF) = 1.5mA (Figure 14) Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
MIN 400 2.0 16 8.0 -
TYP 0.250 10 12 51 75 47 87 10 33 2000 400 100 5.0
MAX 4.0 25 250 100 0.300 18 77 110 71 130 -
UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH
Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse-Transfer Capacitance Internal Drain Inductance
Internal Source Inductance
LS
-
12.5
-
nH
Junction to Case Junction to Ambient
RJC RJA Free Air Operation
-
-
0.70 30
oC/W oC/W
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IRFP350
Source to Drain Diode Specifications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D
MIN -
TYP -
MAX 16 64
UNITS A A
S
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge NOTES:
VSD trr QRR
TJ = 25oC, ISD = 16A, VGS = 0V (Figure 13) TJ = 150oC, ISD = 15A, dISD/dt = 100A/s TJ = 150oC, ISD = 15A, dISD/dt = 100A/s
270 1.7
-
1.6 1300 8.1
V ns C
2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 40V, starting TJ = 25oC, L = 5.66mH, RG = 50, peak IAS = 15A.
Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0
Unless Otherwise Specified
20
0.8 0.6 0.4 0.2 0
ID , DRAIN CURRENT (A) 0 50 100 150
16
12
8
4
0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
1 ZJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10-2 SINGLE PULSE PDM
10-3 10-5
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC +TC 10-3 10-2 0.1 1 10
t1 t2 t2
10-4
t1 , RECTANGULAR PULSE DURATION (S)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
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IRFP350 Typical Performance Curves
103 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) 10s 100s 1ms 10ms 1 TC = 25oC TJ = MAX RATED SINGLE PULSE 0.1 1 102 10 VDS , DRAIN TO SOURCE VOLTAGE (V) DC ID, DRAIN CURRENT (A)
Unless Otherwise Specified
(Continued)
25 VGS = 6.0V VGS = 10V 20 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 5.5V
ID, DRAIN CURRENT (A)
102
15
10
10 VGS = 5.0V 5 VGS = 4.0V
VGS = 4.5V 200
103
0
0
40 80 120 160 VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
25
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
VGS = 10V VGS = 6.0V
102
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
20
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS = 2 x VGS
10
15
VGS = 5.5V
10 VGS = 5.0V 5 VGS = 4.0V 0 VGS = 4.5V 10
TJ = 150oC 1
TJ = 25oC
0
2 4 6 8 VDS , DRAIN TO SOURCE VOLTAGE (V)
0.1 0
2 4 6 8 VSD , GATE TO SOURCE VOLTAGE (V)
10
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
0.75
NORMALIZED DRAIN TO SOURCE ON RESISTANCE VOLTAGE
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
2.5
rDS(ON), DRAIN TO SOURCE ON RESISTANCE
0.60
2.0
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID = 8.9A, VGS = 10V
0.45
VGS = 10V
1.5
0.30
VGS = 20V
1.0
0.15
0.5
0 0 13 26 39 ID, DRAIN CURRENT (A) 52 65
0 -60
-40
-20
0
20
40
60
80
100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
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IRFP350 Typical Performance Curves
1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A
Unless Otherwise Specified
(Continued)
5000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS CISS
1.15 C, CAPACITANCE (pF)
4000
1.05
3000
0.95
2000 COSS 1000 CRSS
0.85
0.75 -60
-40
-20
0
20
40
60
80
100 120 140 160
0
TJ , JUNCTION TEMPERATURE (oC)
1
2
5
10
2
5
102
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
25 gfs, TRANSCONDUCTANCE (S)
20
TJ = 25oC 15
ISD, SOURCE TO DRAIN CURRENT (A)
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS = 2 x VGS
102
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
10
10
TJ = 150oC 1
TJ = 25oC
TJ = 150oC
5
0
0.1 0 5 10 15 ID , DRAIN CURRENT (A) 20 25 0 0.4 0.8 1.2 1.6 VSD , SOURCE TO DRAIN VOLTAGE (V) 2.0
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE
20 VGS, GATE TO SOURCE VOLTAGE (V) ID = 16A 16 VDS = 80V 12 VDS = 200V VDS = 320V
8
4
0 0 30 60 90 120 150 Qg , GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
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IRFP350 Test Circuits and Waveforms
VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD
+
-
0V
IAS 0.01
0 tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON td(ON) tr RL VDS 90%
tOFF td(OFF) tf 90%
+
RG DUT
-
VDD
0
10% 90%
10%
VGS VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS
12V BATTERY
0.2F
50k 0.3F
G
DUT 0
IG(REF) 0 IG CURRENT SAMPLING RESISTOR
S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
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IRFP350
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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